Fray Symposium - Boron-doping Of Silicon Nanoparticles Using Gas Phase Reaction With Inductive Coupled Plasma
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2011-Sustainable Industrial Processing Summit
SIPS2011 Volume 7: Composites, Ceramics, Nanomaterials & Titanium Processing

Editors:Florian K
Publisher:Flogen Star OUTREACH
Publication Year:2012
Pages:646 pages
ISBN:978-0-9879917-6-8
ISSN:2291-1227 (Metals and Materials Processing in a Clean Environment Series)

    Boron-doping Of Silicon Nanoparticles Using Gas Phase Reaction With Inductive Coupled Plasma

    Boyun Jang1;
    1KOREA INSTITUTE OF ENERGY RESEARCH, Daejeon, Korea, South;
    Type of Paper: Regular
    Id Paper: 490
    Topic: 9

    Abstract:

    Silicon nanoparticles have been enormously researched for new applications such as printable electronics. To make silicon nanoparticle function as a semiconducting material, doping concentration is the key factor to determine the electrical properties. Crystalline and amorphous silicon nanoparticles were doped with boron during the formations of nanoparticles using Inductive Coupled Plasma (ICP). Effects of various process conditions on microstructural and electrical properties were investigated. Boron-doped silicon nanoparticles were successively synthesized and doping concentration depends on partial pressures of borane and plasma powers. The maximum doping concentration was 5 x 1019 atoms/cm3 and sheet resistance was 800 mohm/square.

    Keywords:

    Silicon nanoparticles, Boron-doping, Gas phase reaction, Inductive coupled plasma

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    Cite this article as:

    Jang B. Boron-doping Of Silicon Nanoparticles Using Gas Phase Reaction With Inductive Coupled Plasma. In: Florian K, editors. Sustainable Industrial Processing Summit SIPS2011 Volume 7: Composites, Ceramics, Nanomaterials & Titanium Processing. Volume 7. Montreal(Canada): FLOGEN Star Outreach;2012. p..