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2011-Sustainable Industrial Processing Summit
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| Editors: | Florian K |
| Publisher: | Flogen Star OUTREACH |
| Publication Year: | 2012 |
| Pages: | 764 pages |
| ISBN: | 978-0-9879917-5-1 |
| ISSN: | 2291-1227 (Metals and Materials Processing in a Clean Environment Series) |
Preparation Of ZnS Thin Film For Compound Semiconductor Solar Cells
KIMURA SHUNJI1; Yoshitaro Nose2; Kazuaki Toyoura2; Tetsuya Uda2;1KYOTO UNIVERSITY, Kyoto, Japan; 2KYOTO UNIVERSITY, Kyoto , Japan;
Type of Paper: Regular
Id Paper: 319
Topic: 14
Abstract:
There are many demands for clean energy sources to solve environmental issues. Solar cells are drawing interests as an alternative energy source. In our group, trizinc diphosphide, Zn3P2, and zinc-tin-diphosphide, ZnSnP2, are focused on as absorbers for solar cells. They are reported to be p-type semiconductors. Therefore, an n-type semiconductor is needed for solar cell devices. We consider to use ZnS thin film on the above absorbers.In Cu (In,Ga)Se2 (CIGS) solar cells, CdS was used for a n-type layer, but recently, ZnS-based materials are investigated as a Cd-free material. In addition, ZnS has a band gap of 3.68 eV [1], while the band gap of CdS is 2.42 eV [2]. This means that ZnS has an advantage for solar transmission, which is the required characteristic for the n-type layer.In this study, chemical bath deposition (CBD) is adopted for a process of the preparation of ZnS thin film. CBD is a process under atmosphere pressure and at relatively low temperatures. We investigate the morphology, the crystal quality and properties of semiconductor of ZnS thin film under various fabrication conditions, and discuss from a view point of thermodynamics.