Fray Symposium - Photoluminescence Characterization Of The Silicon Layers
CD-FraySymposium_Volume1
CD shopping page

2011-Sustainable Industrial Processing Summit
SIPS2011 Volume 5: Environmental, Policy, Health, Legal, Management, Economical & Social Issues

Editors:Florian K
Publisher:Flogen Star OUTREACH
Publication Year:2012
Pages:646 pages
ISBN:978-0-9879917-4-4
ISSN:2291-1227 (Metals and Materials Processing in a Clean Environment Series)

    Photoluminescence Characterization Of The Silicon Layers

    Besire Cena1;
    1UNIVERSITY OF PRISHTINA, Prishtina, Kosovo;
    Type of Paper: Regular
    Id Paper: 336
    Topic: 7

    Abstract:

    Silicon layers deposited on glass substrate by successive chemical solution deposition (SCSD) were studied. Photoluminescence spectra (PL) and optical absorption characteristics due to different treatment of the film were investigated. It was found that the PL peak intensity at visible region remarkably increases when air annealing of the film in performed. Infrared absorption studies indicated that surface molecule identities are immaterial to the enhancement or degradation of photoluminescence. Some other properties of the deposited layers such as transmittance or reflection studied as well. The studied properties akin to the Photovoltaic Cells could be useful for the layer-based silicon production. PACC: 7360F, 7340S, 7360T

    Keywords:

    Photoluminescence, solution deposition, transmittance, absorption

    Full Text:

    Click here to access the Full Text

    Cite this article as:

    Cena B. Photoluminescence Characterization Of The Silicon Layers. In: Florian K, editors. Sustainable Industrial Processing Summit SIPS2011 Volume 5: Environmental, Policy, Health, Legal, Management, Economical & Social Issues. Volume 5. Montreal(Canada): FLOGEN Star Outreach;2012. p..